The STF25N10F7 is a high-performance, N-channel Power MOSFET presented by STMicroelectronics, renowned for their advanced semiconductor solutions. This MOSFET is part of the MDmesh™ K5 series which employs the fifth generation of STMicroelectronics' Super Junction technology, designed to offer extremely low on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), resulting in high efficiency and reliability.

Key Features

• Voltage: The STF25N10F7 is designed to handle continuous drain currents with a maximum drain-source voltage of 100V, making it suitable for a wide range of power applications.
• Current: It can support a continuous drain current of 25A, ensuring high performance in power-intensive operations.
• R<sub>DS(on): With a low on-state resistance of typically 0.036 Ohm, this MOSFET ensures minimal power loss and heat generation during operation.
• High Switching Efficiency: The device features a low gate charge and low capacitances, which contribute to its high-speed switching capabilities and reduced switching losses.
• Package: Housed in a TO-220FP package, the STF25N10F7 offers excellent thermal performance and is compatible with standard mounting and heat-sinking methods.

Applications

The STF25N10F7 is suitable for a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• DC-DC Converters
• High-Efficiency Power Management
• Solar Power Inverters
• Motor Control

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STF25N10F7 is no exception, benefiting from rigorous testing and quality control processes that ensure its performance in demanding environments. With its robust design and advanced technology, the STF25N10F7 is a reliable choice for designers and engineers seeking to optimize their power management solutions.