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STF26NM60ND

Part No STF26NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 54.6nC @ 10V
Max Input Capacitance 1817pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1003599-STF26NM60ND
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF26NM60ND CAD Model

Description

STF26NM60ND - N-channel 600V - 0.165 Ohm - 20A MDmesh™ II Plus Low Qg Power MOSFET

The STF26NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This advanced MOSFET is part of the MDmesh™ II Plus series, which is renowned for its excellent energy efficiency and low on-resistance. It is designed to meet the demanding requirements of a wide range of electronic applications, including switch-mode power supplies (SMPS), lighting, welding, and high-frequency converters.

With a drain-source voltage (V<sub>DS) of 600V, the STF26NM60ND is capable of handling high voltage applications with ease. Its low on-resistance of just 0.165 Ohm minimizes conduction losses, making it an ideal choice for power circuits looking to maximize efficiency. The device also boasts a continuous drain current (I<sub>D) of 20A, allowing it to support substantial current loads.

One of the standout features of the STF26NM60ND is its low gate charge (Qg), which enhances the overall switching performance. This characteristic is particularly beneficial in applications where high-speed switching is crucial. The MOSFET's low threshold voltage ensures that it can be driven at lower voltages, which is advantageous for low-power applications and helps in reducing power consumption.

The STF26NM60ND comes in a TO-220FP package, which is widely used and recognized for its reliability and robustness. This package is suitable for through-hole mounting, which makes it easy to integrate into various circuit designs. Additionally, the TO-220FP package provides excellent thermal characteristics, ensuring the MOSFET operates within safe temperature ranges even under high load conditions.

STMicroelectronics has designed the STF26NM60ND with various built-in protection features. These include an avalanche ruggedness that protects the device in the event of extreme voltage spikes, and a 100% avalanche tested guarantee, ensuring reliability and longevity in the field.

In summary, the STF26NM60ND is a powerful and reliable component that offers a balance of high voltage capability, low on-resistance, and efficient switching performance, making it a top choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6103 $60.0369
54+ $2.1425 $115.6950
84+ $2.0755 $174.3420
116+ $2.0085 $232.9860
149+ $1.9416 $289.2984
200+ $1.7406 $348.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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