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STF2HNK60Z

Part No STF2HNK60Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 4.8 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066352-STF2HNK60Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF2HNK60Z CAD Model

Description

The STF2HNK60Z is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the MDmesh™ K5 series, which is well-renowned for its outstanding efficiency and thermal performance. It is designed to meet the stringent requirements of power supply and conversion systems, making it an ideal choice for a wide range of applications including switch-mode power supplies (SMPS), lighting, DC-AC converters, and motor control.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be driven at lower gate voltages, which is beneficial for low-power applications and enhances overall system efficiency.
  • High Blocking Voltage: With a drain-source voltage (V<sub>DS) of 600V, the STF2HNK60Z can handle high voltage applications, providing a wide safety margin for electrical isolation and robustness.
  • Reduced On-Resistance: The on-resistance (R<sub>DS(on)) is minimized, which translates to lower conduction losses and improved power efficiency.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics, which is critical for improving the performance of high-frequency power electronic circuits.
  • Enhanced dv/dt Capability: The product is engineered to withstand high dv/dt rates, ensuring reliability and longevity in fast-switching applications.
  • 100% Avalanche Tested: Each unit is thoroughly tested for avalanche ruggedness, ensuring that it can endure high-energy pulses.

Applications

The STF2HNK60Z is versatile and can be implemented in various applications, such as:

  • LED Lighting applications
  • High-efficiency switch-mode power supplies (SMPS)
  • Power adapters and chargers
  • DC/DC converters
  • Motor control circuits
  • Inverters for solar energy systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STF2HNK60Z is no exception, as it is designed and manufactured to meet the highest industry standards for performance and reliability. With its robust design and advanced manufacturing process, this MOSFET is built to deliver consistent performance over a long operational lifespan.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official STMicroelectronics website or contact their local sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4181 $58.5340
340+ $0.3430 $116.6200
525+ $0.3326 $174.6150
720+ $0.3211 $231.1920
930+ $0.3107 $288.9510
1,245+ $0.2784 $346.6080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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