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STF3NK80Z

Part No STF3NK80Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 2.5A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 485pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 092543-STF3NK80Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STF3NK80
Introduction Date September 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STF3NK80Z CAD Model

Description

The STMicroelectronics 092543-STF3NK80Z is a N-Channel MOSFET transistor that can handle a maximum power dissipation of 25W (Tc) and has a drain-source breakdown voltage of 800V.

  • Maximum Power Dissipation: 25W (Tc)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 50μA
  • Maximum Rds On: 4.5 Ohm @ 1.25A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7295 $58.3600
195+ $0.5987 $116.7465
300+ $0.5800 $174.0000
415+ $0.5613 $232.9395
535+ $0.5425 $290.2375
715+ $0.4864 $347.7760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,635 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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