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STF46N60M6

Part No STF46N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 100 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF46
Other Names 497-STF46N60M6
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278042-STF46N60M6
Ultra Librarian 3D Model Ultra Librarian STF46N60M6 CAD Model

Description

STF46N60M6 - High-Performance N-Channel Power MOSFET

The STF46N60M6 is a cutting-edge N-channel Power MOSFET developed by STMicroelectronics, designed to meet the needs of modern high-efficiency power conversion applications. This device is part of STMicroelectronics' MDmesh™ M6 series, which is renowned for its outstanding performance in terms of low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), making it an ideal choice for a wide range of power applications.

With a drain-source voltage (V<sub>DS) of 650V, the STF46N60M6 can handle high voltage operations with ease. It is capable of conducting a continuous drain current (I<sub>D) of up to 46A at 25°C, ensuring robust performance for high-power applications. Its low threshold voltage (V<sub>th) enables efficient operation at low voltages, enhancing its versatility.

The MOSFET's ultra-low R<sub>DS(on) of only 0.036Ω minimizes conduction losses and improves overall efficiency, which is crucial for energy-sensitive systems. The device's fast recovery diode and Zener-protected gate make it highly reliable and easy to use in various circuit configurations.

Designed with an advanced package, the STF46N60M6 offers improved thermal resistance and a compact footprint. The package is 100% avalanche tested, which assures ruggedness and long-term reliability. This feature is particularly important for applications that may experience unexpected voltage spikes.

The STF46N60M6 is suitable for a broad range of applications, including switched-mode power supplies (SMPS), LED lighting, welding equipment, solar inverters, and other power conversion systems that require high efficiency and power density. Its performance is optimized for hard switching topologies such as resonant converters, where low switching losses are essential.

STMicroelectronics provides comprehensive technical support and documentation for the STF46N60M6, including datasheets, application notes, and simulation models. This ensures that engineers can easily integrate this MOSFET into their designs and benefit from its superior performance and energy efficiency.

In summary, the STF46N60M6 from STMicroelectronics represents a remarkable blend of efficiency, reliability, and power handling capability, making it a top choice for designers looking to enhance their power conversion systems.

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