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Same model may have multiple batches, images only for reference.
SIHF7N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF7N60E-GE3

Part No SIHF7N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 600V 7A TO220  /  N-Channel 600 V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
Datasheet
SIHF7N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF7
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHF7N60E-GE3DKR,SIHF7N60E-GE3DKR-ND,SIHF7N60E-GE3TRINACTIVE,SIHF7N60E-GE3CT,SIHF7N60E-GE3DKRINACTIVE,SIHF7N60E-GE3CT-ND,SIHF7N60E-GE3TR,SIHF7N60E-GE3TR-ND
Standard Package 50
Win Source Part Number 1024956-SIHF7N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF7N60E-GE3 CAD Model

Description

The SIHF7N60E-GE3 is an N-channel MOSFET transistor from the E series by Vishay Siliconix.

  • Channel Type: N-Channel
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack
  • Drain-to-Source Voltage (Vdss): 600 V
  • Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Rds On (Max) @ 10V: 600mOhm @ 3.5A, 10V
  • Gate Charge (Qg) (Max) @ 10 V: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ 100 V: 680 pF @ 100 V

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