STF4N80K5 - N-channel 800 V, 3 A SuperMESH™ K5 Power MOSFET in TO-220FP Package

The STF4N80K5 is a cutting-edge power MOSFET device designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of the SuperMESH™ K5 family, which is known for its extremely high efficiency and reliability. It is specifically engineered to address the demanding requirements of high voltage applications that require low on-resistance and fast switching performance.

Key Features:

• High Voltage Capability: The STF4N80K5 operates at an 800 V drain-source breakdown voltage (V<sub>DS), making it suitable for high voltage applications.
• Low On-Resistance: With a very low on-resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss and improved efficiency.
• High Current Rating: This device can handle continuous drain current up to 3 A, providing ample current capacity for a wide range of applications.
• Reduced Gate Charge: The device features a reduced gate charge (Q<sub>g), which results in faster switching and reduced switching losses.
• Enhanced Body Diode: The STF4N80K5 comes with an improved intrinsic diode with a low reverse recovery time, which is beneficial in applications with switching power supplies.
• TO-220FP Package: The device is housed in a fully molded TO-220FP package, providing excellent thermal performance and ease of mounting on a heatsink.

Applications:

The STF4N80K5 is ideal for a broad range of high voltage applications, including:

• Switching power supplies
• Power adapters
• Power factor correction circuits
• LED lighting
• Motor control systems
• High-performance computing

With its robust design and advanced technology, the STF4N80K5 MOSFET from STMicroelectronics is an excellent choice for designers looking to enhance power efficiency and reliability in their high voltage applications. Its performance characteristics make it a standout product in the field of power semiconductors.