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STF4N90K5

Part No STF4N90K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 900 V, 0.25 OHM TYP.,
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 5.3nC @ 10V
Max Input Capacitance 173pF @ 100V
Maximum Gate-Source Voltage ±30V
FET Feature Current Sensing
Power Dissipation (Max) 20W (Ta)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3
Win Source Part Number 1106823-STF4N90K5
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF4N90K5 CAD Model

Description

STF4N90K5 - N-channel 900 V, 4.3 Ω, 4 A SuperMESH™5 Power MOSFET in TO-220FP Package

The STF4N90K5 is a high voltage power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This Power MOSFET is part of the SuperMESH™5 family, which is known for its excellent RDS(on) per area, reduced gate charge, and low capacitance, making it an ideal choice for high efficiency power supplies and energy-saving applications.

With a drain-source voltage (VDS) of 900 V, the STF4N90K5 is well-suited for applications that require high voltage capabilities such as switch-mode power supplies (SMPS), lighting applications including LED drivers, and electronic ballasts. It is also suitable for high-performance power conversion applications like solar inverters and welding equipment.

The device features a low on-resistance (RDS(on)) of just 4.3 Ω, which enhances its efficiency by minimizing conduction losses. The STF4N90K5 also boasts a continuous drain current (ID) of 4 A, providing a good balance between current handling capability and thermal performance, thanks to its TO-220FP package which ensures good heat dissipation.

One of the key advantages of the STF4N90K5 is the SuperMESH™5 technology that combines a new vertical structure with a patented strip layout to yield one of the industry's lowest on-resistance and gate charge. These features make it extremely robust and highly efficient in a variety of power applications.

The device also incorporates Zener-protection from ESD (Electrostatic Discharge), enhancing its ruggedness and reliability when used in harsh environments. This feature ensures that the MOSFET remains protected against unforeseen voltage spikes that could otherwise damage the component.

In conclusion, the STF4N90K5 Power MOSFET from STMicroelectronics is a high-performance, high-efficiency component suitable for a wide range of high voltage applications. Its advanced technology and robust package design make it a reliable choice for designers looking to improve power density and efficiency in their circuits.

For detailed specifications and application support, it is recommended to consult the datasheet and technical resources provided by STMicroelectronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6763 $51.4682
30+ $3.4392 $103.1760
46+ $3.3206 $152.7476
65+ $3.0834 $200.4210
85+ $2.9648 $252.0080
106+ $2.8462 $301.6972
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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