The STF80N10F7 is a state-of-the-art MOSFET transistor developed by STMicroelectronics, a leader in semiconductor solutions. This N-channel MOSFET is a part of the STripFET™ F7 series, which is known for its low on-resistance and low gate charge, making it highly efficient for a variety of applications.

Key Features

• Advanced Technology: The STF80N10F7 utilizes STMicroelectronics' STripFET F7 technology, which offers reduced on-resistance and gate charge to enhance power efficiency.
• High Current Capability: With a continuous drain current of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
• Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)) of just 6.2 mΩ max, which significantly reduces conduction losses.
• High Switching Performance: Fast switching speeds are achieved due to its low gate charge (Q<sub>g), which is beneficial in high-frequency circuits.
• 100% Avalanche Tested: Ensures reliability and robustness by withstanding high energy pulses in avalanche and commutation modes.
• Environmentally Friendly: This product is compliant with RoHS and Halogen-free, minimizing the environmental impact.

Applications

The STF80N10F7 is designed to meet the requirements of a wide range of applications. Its efficiency and power handling capabilities make it ideal for:

• Switching applications in power supply and power management systems.
• High-performance DC/DC converters.
• Motor drives and controllers in automotive and industrial settings.
• Synchronous rectification tasks in computing and telecom power systems.
• Load switches and battery management systems.

Package and Quality

The STF80N10F7 is housed in a TO-220FP package, which is designed for through-hole mounting, providing strong mechanical attachment and heat dissipation capabilities. Moreover, STMicroelectronics' commitment to quality ensures that each MOSFET is rigorously tested to meet high standards of performance and reliability.