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STF9HN65M2

Part No STF9HN65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5.5A TO220FP  /  N-Channel 650 V 5.5A (Tc) 20W (Tc) Through Hole TO-220FP
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M2
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
Power Dissipation (Max) 20W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF9
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16014-5,-497-16014-5
Standard Package 50
Win Source Part Number 984746-STF9HN65M2
Ultra Librarian 3D Model Ultra Librarian STF9HN65M2 CAD Model

Description

STF9HN65M2 - High-Performance MOSFET from STMicroelectronics

The STF9HN65M2 is a state-of-the-art N-channel 650 V MDmesh™ M2 Power MOSFET manufactured by STMicroelectronics. This cutting-edge component is designed using an advanced proprietary process that combines high voltage capability with low on-resistance and high switching speed. It is a perfect choice for a wide range of high-efficiency applications, including switch-mode power supplies (SMPS), lighting applications, adapters, solar inverters, and industrial automation systems.

One of the key features of the STF9HN65M2 is its very low on-state resistance (R<sub>DS(on)), which is typically just 0.42 Ω. This low resistance helps to reduce conduction losses and improve overall efficiency, making it an energy-efficient solution for power management challenges. Additionally, the device boasts a high threshold voltage (V<sub>th) that ensures enhanced control and reliability in operation.

The STF9HN65M2 comes in a fully insulated TO-220FP package, which provides excellent thermal performance and simplifies the assembly process. The package is designed to handle high current and power levels, ensuring reliable performance even under demanding conditions. The insulation of the package allows for a direct heatsink contact that is electrically isolated, providing ease of use and safety in applications where electrical isolation is required.

STMicroelectronics has equipped the STF9HN65M2 with Zener-protected gate, which enhances the robustness of the device against electrostatic discharges and transient voltage spikes. This feature is particularly important in industrial environments where electrical noise and disturbances are common.

In summary, the STF9HN65M2 from STMicroelectronics is a high-performance MOSFET that offers a combination of high voltage capability, low on-resistance, and high switching speed. Its robust design and advanced features make it an ideal solution for engineers looking to improve the efficiency and reliability of their power management systems. With its advanced technology and thoughtful design, this MOSFET stands out as a solid choice for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1704 $65.1120
65+ $1.7809 $115.7585
105+ $1.7253 $181.1565
140+ $1.6696 $233.7440
180+ $1.6139 $290.5020
240+ $1.4470 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,840 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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