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STFI10NK60Z

Part No STFI10NK60Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A I2PAK FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 1370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAKFP (TO-281)
Dimension TO-262-3 Full Pack, I2Pak
Win Source Part Number 066367-STFI10NK60Z
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STFI10NK60Z CAD Model

Description

STFI10NK60Z - N-channel 600 V, 0.85 Ω typ., 10 A SuperMESH™ Power MOSFET in I²PAK Package

The STFI10NK60Z is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative SuperMESH™ technology. This technology combines the benefits of reduced on-resistance, high switching speed, and ruggedized device design to offer superior performance in a wide array of power applications. The STFI10NK60Z is designed to deliver high efficiency and reliability for both hard switching and high-frequency circuits.

Key Features:

  • High Voltage Capability: With a drain-source voltage of 600 V, this MOSFET can handle high voltage applications, making it suitable for industrial, consumer, and lighting applications.
  • Low On-Resistance: Featuring a typical on-resistance of just 0.85 Ω, the STFI10NK60Z ensures minimal power loss and better thermal performance, leading to higher efficiency in power conversion.
  • High Current Rating: A continuous drain current of 10 A allows this MOSFET to handle significant power levels, suitable for a variety of demanding applications.
  • Reduced Gate Charge: The device has been optimized to minimize gate charge (Qg), which results in faster switching and reduced switching losses.
  • Enhanced dv/dt Capability: The device is engineered to withstand high dv/dt rates, enhancing its robustness and reliability in demanding conditions.
  • 100% Avalanche Tested: Ensuring rugged performance, each unit is tested for avalanche energy capability, providing additional security in application.
  • I²PAK Package: The I²PAK package is designed for improved thermal performance and compactness, making it ideal for space-constrained applications.

Applications:

The versatility of the STFI10NK60Z allows it to be utilized in a wide range of applications, including:

  • Switching applications
  • Power supplies
  • Motor control
  • Inverters
  • LED lighting
  • Consumer electronics

With its combination of high voltage capability, low on-resistance, and high current rating, the STFI10NK60Z from STMicroelectronics is a robust and efficient solution for designers looking to improve power management and efficiency in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1326 $63.9780
70+ $1.7498 $122.4860
105+ $1.6952 $177.9960
145+ $1.6406 $237.8870
185+ $1.5858 $293.3730
245+ $1.4218 $348.3410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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