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STFI15N60M2-EP

Part No STFI15N60M2-EP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M2
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 378mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAKFP (TO-281)
Package / Case TO-262-3 Full Pack, I²Pak
Base Product Number STFI15N
Other Names 497-15957-5,-497-15957-5
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278068-STFI15N60M2-EP
Ultra Librarian 3D Model Ultra Librarian STFI15N60M2-EP CAD Model

Description

The STFI15N60M2-EP is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of the MDmesh™ M2 EP series, which is renowned for its excellent energy efficiency and reliability. It is specifically engineered to address the demanding requirements of a wide range of electronic applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

The STFI15N60M2-EP boasts a robust and rugged design, with a maximum drain-source voltage (V<sub>DS) of 600V, which ensures safe operation even under high voltage conditions. It features a low on-resistance (R<sub>DS(on)) of only 0.29 Ω (max), contributing to reduced conduction losses and improved overall efficiency. The MOSFET also has a continuous drain current (I<sub>D) rating of 15A at 25°C, making it capable of handling high current loads without performance degradation.

One of the key advantages of the STFI15N60M2-EP is its fast switching performance. This is facilitated by its low gate charge (Q<sub>g), which enhances the switching speed and reduces switching losses, particularly beneficial in high-frequency power switching applications. Additionally, the device features a 100% avalanche tested design, which guarantees robustness and long-term reliability.

The STFI15N60M2-EP comes in an ISOTOP package, which is known for its superior thermal performance and minimal footprint on PCBs. This package allows for efficient heat dissipation, ensuring the MOSFET operates within its thermal limits even under high power conditions. The device also includes Zener-protected gate, which provides enhanced protection against overvoltage, making it more resilient in harsh electrical environments.

In summary, the STFI15N60M2-EP from STMicroelectronics is a state-of-the-art power MOSFET that combines high voltage capability, low on-resistance, fast switching, and robust thermal performance. It is an ideal choice for designers looking for a reliable and efficient power management solution for their high-demand applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8426 $58.9820
170+ $0.6914 $117.5380
260+ $0.6698 $174.1480
360+ $0.6482 $233.3520
465+ $0.6266 $291.3690
620+ $0.5618 $348.3160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,520 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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