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STFI6N65K3

Part No STFI6N65K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5.4A I2PAKFP / N-Channel 650 V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 50 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Supplier Device Package I2PAKFP (TO-281)
Case / Package TO-262-3 Full Pack, I²Pak
Base Product Number STFI6N
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-13599-5,-497-13599-5
Standard Package 50
Win Source Part Number 1325415-STFI6N65K3
Ultra Librarian 3D Model Ultra Librarian STFI6N65K3 CAD Model

Description

STFI6N65K3 - High-Performance N-Channel MOSFET by STMicroelectronics

The STFI6N65K3 is a cutting-edge N-Channel MOSFET developed by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch mode power supplies (SMPS), lighting, AC-DC converters, and motor control systems.

With its advanced MDmesh™ K3 technology, the STFI6N65K3 offers an optimal balance of on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), which results in reduced conduction and switching losses. This technology is based on an innovative proprietary vertical structure, which enhances the device's performance in terms of conduction, switching speeds, and energy efficiency.

The device features a breakdown voltage (V<sub>DSS) of 650V, which ensures a robust performance even under high voltage conditions. Its maximum continuous drain current (I<sub>D) is rated at 5.3A, making it suitable for handling significant power levels. The STFI6N65K3 also boasts a low threshold voltage (V<sub>GS(th)), which contributes to its ease of drive and responsiveness.

One of the notable features of the STFI6N65K3 is its 100% avalanche tested design, which guarantees enhanced ruggedness and reliability. This feature is particularly important for applications that may experience unexpected voltage spikes or surges.

Moreover, the device comes in an I2PAK (TO-262) package, which provides a compact footprint while ensuring good thermal performance. This package is designed to facilitate easy mounting and is compatible with various PCB design standards.

In summary, the STFI6N65K3 from STMicroelectronics is a high-performance N-Channel MOSFET that offers exceptional efficiency, robustness, and reliability for a diverse range of high-voltage applications. Its advanced technology, combined with a user-friendly package, makes it a top choice for engineers looking to optimize their power management systems.

For detailed specifications and application support, visit the STMicroelectronics website or contact their technical support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0638 $58.5090
135+ $0.8732 $117.8820
205+ $0.8455 $173.3275
285+ $0.8189 $233.3865
365+ $0.7912 $288.7880
490+ $0.7092 $347.5080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 495 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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