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STGD19N40LZ

Part No STGD19N40LZ
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 20V 40A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 17 Weeks
Features IGBT - 390 V 25 A 125 W Surface Mount DPAK
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK
Family Name STGD19
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-15310-6, 497-15310-2, 497-15310-1
Quantity per package 2500
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935362-STGD19N40LZ
Ultra Librarian 3D Model Ultra Librarian STGD19N40LZ CAD Model

Description

STGD19N40LZ - N-channel 400 V, 0.135 Ω typ., 17 A MDmesh™ DM2 Power MOSFET in a DPAK package

The STGD19N40LZ is a high-performance N-channel power MOSFET from STMicroelectronics, designed with the innovative MDmesh™ DM2 technology that combines excellent RDS(on) with low gate charge. This device is optimized for a wide range of applications that require high efficiency and power density, making it an ideal choice for switch-mode power supplies, lighting applications, DC-AC inverters, and more.

With a drain-source voltage (VDS) of 400 V, the STGD19N40LZ can handle high voltage applications with ease. Its low on-resistance of just 0.135 Ω (typical) minimizes conduction losses, while the 17 A continuous drain current (ID) capability ensures robust performance in demanding situations. This MOSFET is housed in a DPAK package, which is known for its compact footprint and excellent thermal performance.

Key features of the STGD19N40LZ include:

  • 400 V drain-source voltage (VDS) rating for high voltage operation
  • Ultra-low on-resistance (RDS(on)) of 0.135 Ω (typical) to reduce power losses
  • High continuous drain current (ID) of 17 A for robust power handling
  • MDmesh™ DM2 technology that ensures high efficiency and fast switching
  • Low gate charge (Qg) for reduced switching losses
  • 100% avalanche tested to guarantee reliability in harsh conditions
  • DPAK package for a compact design and efficient heat dissipation

The STGD19N40LZ also features Zener-protected gate, providing intrinsic protection against electrostatic discharge (ESD) and enhancing the reliability of the device in sensitive applications. Its fast switching speed, combined with the low gate charge, makes it suitable for high-frequency circuits, contributing to the reduction of electromagnetic interference (EMI).

STMicroelectronics' commitment to sustainability is evident in the STGD19N40LZ, which is RoHS compliant and free from environmentally harmful substances. Engineers looking for a power MOSFET with a strong balance of efficiency, reliability, and thermal performance will find the STGD19N40LZ to be an excellent choice for their power conversion and management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8078 $63.2730
80+ $1.4834 $118.6720
125+ $1.4371 $179.6375
170+ $1.3906 $236.4020
215+ $1.3443 $289.0245
290+ $1.2053 $349.5370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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