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STGFW40V60F

Part No STGFW40V60F
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Power - Max 62.5 W
Switching Energy 456µJ (on), 411µJ (off)
Input Type Standard
Gate Charge 226 nC
Td (on/off) @ 25°C 52ns/208ns
Test Condition 400V, 40A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Base Product Number STGFW40
Other Names 497-15007-5,-497-15007-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277378-STGFW40V60F
Ultra Librarian 3D Model Ultra Librarian STGFW40V60F CAD Model

Description

The STGFW40V60F is a state-of-the-art field-stop trench IGBT produced by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance products. This IGBT (Insulated Gate Bipolar Transistor) is designed to offer a seamless blend of high efficiency and fast switching, making it an ideal choice for a variety of power applications.

With a maximum collector-emitter voltage (V<sub>CE) of 600V and a collector current rating of 40A, the STGFW40V60F provides robust performance for high-power systems. The device's trench gate field-stop structure enhances its voltage-blocking capability while minimizing on-state voltage drop (V<sub>CE(sat)), leading to lower conduction losses.

The STGFW40V60F is optimized for use in hard-switching applications, such as Uninterruptible Power Supplies (UPS), solar inverters, and welding equipment. Its fast-switching characteristics are also well-suited for high-frequency circuits, making it a versatile component in the modern power electronics domain.

Key Features:

  • Maximum Collector-Emitter Voltage (V<sub>CE): 600V
  • Collector Current (I<sub>C): 40A
  • Low On-State Voltage (V<sub>CE(sat))
  • High Switching Speed
  • Low Gate Charge and Reduced Total Switching Loss
  • Co-packed with a soft and fast recovery anti-parallel diode

The IGBT is also equipped with a soft and fast recovery anti-parallel diode, which is essential for reducing electromagnetic interference (EMI) and increasing the reliability of the system in which it is implemented. The low gate charge of the STGFW40V60F contributes to a reduced total switching loss, making it an energy-efficient choice for environmentally conscious applications.

STMicroelectronics ensures that the STGFW40V60F meets the highest quality and performance standards. The device is available in a TO-3PF package, which is known for its excellent thermal performance and is compatible with standard assembly processes. With its technical excellence and proven reliability, the STGFW40V60F stands out as a superior choice for designers seeking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $4.0649 $60.9735
35+ $3.3354 $116.7390
54+ $3.2312 $174.4848
74+ $3.1270 $231.3980
96+ $3.0226 $290.1696
128+ $2.7100 $346.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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