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STGP30V60DF

Part No STGP30V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 60A 258W TO220AB / IGBT Trench Field Stop 600 V 60 A 258 W Through Hole TO-220
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 258 W
Switching Energy 383µJ (on), 233µJ (off)
Input Type Standard
Gate Charge 163 nC
Td (on/off) @ 25°C 45ns/189ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 53 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-13762-5,497-13762-5
Standard Package 50
Win Source Part Number 993519-STGP30V60DF
Ultra Librarian 3D Model Ultra Librarian STGP30V60DF CAD Model

Description

STGP30V60DF - IGBT from STMicroelectronics

The STGP30V60DF is a high-performance insulated gate bipolar transistor (IGBT) designed by STMicroelectronics, a leader in semiconductor solutions. This device is tailored for a variety of power applications, offering a blend of high efficiency and fast switching. It is particularly well-suited for applications requiring a robust and reliable high-voltage switch, such as motor drives, uninterruptible power supplies (UPS), and power inverters.

The STGP30V60DF operates at a maximum collector-emitter voltage (VCE) of 600V, which allows for a comfortable margin in high-voltage circuit designs. Its collector current rating of 60A at 25°C ensures that it can handle significant power levels, making it a versatile choice for demanding applications. The device also features a low collector-emitter saturation voltage (VCE(sat)), which reduces on-state power dissipation and improves overall efficiency.

One of the key attributes of the STGP30V60DF is its short-circuit withstand time of 10μs, providing robust protection against sudden electrical faults and enhancing system reliability. Additionally, the IGBT is designed with a positive temperature coefficient, which simplifies the design of parallel circuits by ensuring current sharing between devices.

The device includes a fast and soft recovery anti-parallel diode, which is optimized for high-frequency switching. This minimizes switching losses and electromagnetic interference (EMI), making it ideal for noise-sensitive applications. Its tight parameter distribution and high ruggedness contribute to a consistent performance and a reduced need for over-engineering.

STMicroelectronics has packaged the STGP30V60DF in a TO-220 package, which offers excellent thermal performance and is compatible with a wide range of heatsinks. This package is known for its ease of installation and is suitable for through-hole mounting, which is favorable for prototyping and production alike.

In summary, the STGP30V60DF from STMicroelectronics is a state-of-the-art IGBT that offers high efficiency, fast switching, and robustness for a variety of power applications. Its technical features and reliable package make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.5439 $55.4390
22+ $4.5488 $100.0736
35+ $4.4067 $154.2345
47+ $4.2645 $200.4315
61+ $4.1224 $251.4664
82+ $3.6959 $303.0638
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Availability: 283 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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