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STGWA20HP65FB2

Part No STGWA20HP65FB2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP 650 V, 20 / IGBT Trench Field Stop 650 V 40 A 147 W Through Hole TO-247 Long Leads
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB2
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 147 W
Switching Energy 214µJ (off)
Input Type Standard
Gate Charge 56 nC
Td (on/off) @ 25°C -/78.8ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STGWA20HP65FB2
Standard Package 30
Win Source Part Number 1015255-STGWA20HP65FB2
Ultra Librarian 3D Model Ultra Librarian STGWA20HP65FB2 CAD Model

Description

STGWA20HP65FB2 - High-Efficiency IGBT from STMicroelectronics

The STGWA20HP65FB2 is a state-of-the-art insulated gate bipolar transistor (IGBT) produced by STMicroelectronics, a leader in semiconductor solutions. This high-performance IGBT is designed to meet the demanding requirements of modern power electronic applications, offering a perfect blend of efficiency, reliability, and thermal performance.

With a maximum collector-emitter voltage of 650V and a continuous collector current rating of 40A at 25°C, the STGWA20HP65FB2 is tailored for high-voltage and high-current applications. Its robustness is further enhanced by the device's high short-circuit withstand time, making it suitable for tough industrial environments.

The STGWA20HP65FB2 features STMicroelectronics' advanced trench gate field-stop technology, which significantly reduces on-state voltage drop (VCE(sat)) and minimizes switching losses. This technology allows for higher efficiency in applications such as motor drives, power inverters, and power factor correction circuits. The device is also characterized by a positive temperature coefficient on VCE(sat), which simplifies paralleling IGBTs when higher current handling is required.

Another remarkable attribute of the STGWA20HP65FB2 is its co-packaged, ultra-fast and soft recovery anti-parallel diode. The diode is optimized for minimal reverse recovery time (trr), which is essential for reducing electromagnetic interference (EMI) and improving the overall efficiency of the system.

The IGBT comes in a through-hole TO-247 long leads package, which is known for excellent thermal performance and ease of mounting onto heat sinks. This package is widely accepted in the industry and is compatible with a broad range of PCB layouts.

STMicroelectronics has also taken steps to ensure the STGWA20HP65FB2 meets environmental standards. The device is compliant with RoHS and halogen-free, reflecting STMicroelectronics' commitment to environmental sustainability.

In summary, the STGWA20HP65FB2 is a high-power, high-efficiency IGBT that is ideal for a wide array of power applications. Its cutting-edge technology and robust design make it a dependable choice for engineers looking to optimize their power systems for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4739 $51.9519
50+ $2.0299 $101.4950
77+ $1.9665 $151.4205
106+ $1.9030 $201.7180
136+ $1.8396 $250.1856
182+ $1.6493 $300.1726
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,600 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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