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STGWA25S120DF3

Part No STGWA25S120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Power - Max 375 W
Switching Energy 830µJ (on), 2.37mJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C 31ns/147ns
Test Condition 600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr) 265 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGWA25
Other Names 497-15628-5,-497-15628-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277384-STGWA25S120DF3
Ultra Librarian 3D Model Ultra Librarian STGWA25S120DF3 CAD Model

Description

Introducing the STGWA25S120DF3 from STMicroelectronics

The STGWA25S120DF3 is a state-of-the-art silicon carbide (SiC) power MOSFET, designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of ST's SiC MOSFET portfolio that leverages the robustness and efficiency of Silicon Carbide technology. The STGWA25S120DF3 is specifically engineered to meet the demanding requirements of high-performance power conversion systems.

Key Features

  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 1200V, the STGWA25S120DF3 is well-suited for applications requiring high voltage operation, ensuring reliability and safety in power management tasks.
  • Low On-Resistance: The device boasts a low on-resistance (R<sub>DS(on)) of just 25 mΩ, minimizing conduction losses and improving overall efficiency, which is crucial for energy-sensitive applications.
  • High Switching Speed: Fast switching capabilities are a hallmark of SiC MOSFETs, and the STGWA25S120DF3 is no exception. This results in reduced switching losses and enables higher-frequency operation, which can lead to smaller and more efficient power supply designs.
  • Robustness: The MOSFET is characterized by its high-temperature performance and excellent ruggedness, ensuring stable operation even under harsh conditions.
  • Reduced Parasitics: The package design of the STGWA25S120DF3 minimizes parasitic inductances and capacitances, further enhancing the device's performance in fast-switching applications.

Applications

The STGWA25S120DF3 is ideal for a wide range of applications, including but not limited to:

  • Electric vehicle (EV) chargers
  • Photovoltaic (solar) inverters
  • Switched-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • High-performance power converters and inverters

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGWA25S120DF3 is no exception, undergoing rigorous testing and quality control measures to ensure it performs to the expectations of the most demanding applications.

By choosing the STGWA25S120DF3 for your power conversion needs, you're selecting a product that offers a perfect blend of efficiency, performance, and reliability, backed by STMicroelectronics' extensive expertise in semiconductor technology.

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