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STGWA40N120KD

Part No STGWA40N120KD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 80A 240W TO247
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Tube
Part Status Obsolete (End Of Life)
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 3.85V at 15V, 30A
Power - Max 240W
Switching Energy 3.7mJ (on), 5.7mJ (off)
Input Type Standard
Gate Charge 126nC
Td (on/off) at 25°C 48ns/338ns
Test Condition 960V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 84ns
Temperature Range - Operating -55°C ~ 125°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Part Number Series STGWA40
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 802912-STGWA40N120KD
Ultra Librarian 3D Model Ultra Librarian STGWA40N120KD CAD Model

Description

STGWA40N120KD - High Performance IGBT from STMicroelectronics

The STGWA40N120KD is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This IGBT is part of ST's advanced PowerMESH™ line, which is engineered to deliver superior switching performance, high efficiency, and exceptional reliability for a wide range of power applications.

With a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 40A at 25°C, the STGWA40N120KD is well-suited for high-voltage and high-current applications. This device is designed to address the needs of applications requiring high efficiency and fast switching, such as solar inverters, uninterruptible power supplies (UPS), motor drives, and high-performance power converters.

The STGWA40N120KD boasts a low on-state voltage drop (V<sub>CE(sat)) due to its optimized PowerMESH™ structure, which enhances the device's conduction efficiency, thereby reducing energy losses and improving overall system efficiency. Furthermore, its high-speed switching capabilities minimize switching losses, making it an excellent choice for high-frequency operation.

One of the key features of this IGBT is its robustness against short-circuit events. It offers a short-circuit withstand time of 10 µs, providing designers with a safety margin in applications where transient conditions may occur. Additionally, the device is designed with a co-packaged fast recovery diode, which further streamlines the design process by reducing the number of external components required and simplifying the overall circuit layout.

The STGWA40N120KD comes in a TO-247 long leads package, which ensures excellent thermal performance and simplifies mounting onto heat sinks for thermal management. The package is designed to handle high power levels and to provide good isolation between the IGBT and the heatsink, thus ensuring safe operation even under harsh conditions.

Overall, the STGWA40N120KD from STMicroelectronics is an excellent choice for designers looking for a robust, high-performance IGBT that can enhance the efficiency and reliability of their power management systems. Its cutting-edge technology and superior electrical characteristics make it a pivotal component in advancing power electronics applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.8333 $54.1665
12+ $8.8889 $106.6668
18+ $8.6111 $154.9998
25+ $8.3333 $208.3325
32+ $8.0556 $257.7792
42+ $7.2223 $303.3366
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,347 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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