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STI12NM50N

Part No STI12NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 940pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066392-STI12NM50N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STI12NM50N CAD Model

Description

STI12NM50N - Power MOSFET from STMicroelectronics

The STI12NM50N is a cutting-edge power MOSFET device designed by STMicroelectronics, one of the industry's leading manufacturers of semiconductor products. This high-performance MOSFET is part of ST's MDmesh™ series, which is renowned for its excellent energy efficiency and thermal performance. With a focus on minimizing on-state resistance and maximizing power density, the STI12NM50N is a perfect choice for a wide range of power applications.

Key Features

  • High Voltage Capability: The STI12NM50N operates at a drain-source voltage of 500V, providing ample headroom for high voltage applications.
  • Low On-Resistance: With a low on-state resistance of typically 0.38 ohms, this MOSFET ensures reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The device's fast switching characteristics make it suitable for high-frequency power switching applications.
  • Enhanced Thermal Performance: The MOSFET's package is designed for optimal heat dissipation, ensuring reliability even under high temperature operating conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring robust performance under extreme conditions.

Applications

The STI12NM50N is versatile and can be implemented in various power management scenarios, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control applications
  • LED lighting solutions
  • Power factor correction circuits

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STI12NM50N is no exception, with its robust design and manufacturing process ensuring consistent performance and longevity. Customers can confidently integrate this MOSFET into their designs, knowing it comes backed by ST's reputation for excellence in semiconductor technology.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet and technical documentation available on the STMicroelectronics website. The STI12NM50N represents a smart choice for those looking to enhance power efficiency and reliability in their electronic designs.

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