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STI175N4F6AG

Part No STI175N4F6AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A I2PAK  /  N-Channel 40 V 120A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™ F6
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7735 pF @ 20 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI175N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 966507-STI175N4F6AG
Ultra Librarian 3D Model Ultra Librarian STI175N4F6AG CAD Model

Description

The STI175N4F6AG is a state-of-the-art N-channel MDmesh™ DM6 Power MOSFET designed and manufactured by STMicroelectronics. This high-performance MOSFET is crafted using an advanced proprietary process that combines the latest in trench gate and proprietary shield design to deliver superior performance in power conversion applications.

With a drain-source voltage (V<sub>DS) of 40V and a continuous drain current (I<sub>D) of 175A at 25°C, the STI175N4F6AG is capable of handling high current loads while maintaining high efficiency and reliability. Its low on-resistance (R<sub>DS(on)) of only 4.4 mΩ max ensures minimal power loss during operation, making it an ideal choice for energy-sensitive designs.

The device's enhanced power density and switching performance make it particularly suitable for a wide range of applications, including but not limited to, synchronous rectification for Switched Mode Power Supplies (SMPS), high-efficiency DC/DC converters, and high current motor drivers. Additionally, its robustness is enhanced by a high avalanche ruggedness capability, which provides reliable operation even under stressful conditions.

The STI175N4F6AG also features an extremely low gate charge (Q<sub>g), which reduces the power dissipation during switching, contributing to the overall efficiency of the power management system. Its 100% avalanche tested design guarantees safe operation under abnormal operating conditions.

This Power MOSFET is housed in a highly efficient and thermal-resistant H2PAK-6 package, which provides excellent thermal performance and simplifies the PCB mounting process. The package is designed with a large lead frame for better heat dissipation and improved mechanical robustness, making the STI175N4F6AG a reliable choice for demanding environments.

With its combination of high efficiency, robust design, and advanced technology, the STI175N4F6AG from STMicroelectronics represents a top-tier solution for designers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7334 $52.0020
75+ $1.4223 $106.6725
110+ $1.3778 $151.5580
150+ $1.3334 $200.0100
195+ $1.2889 $251.3355
260+ $1.1556 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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