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STI270N4F3

Part No STI270N4F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 7400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1003603-STI270N4F3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STI270N4F3 CAD Model

Description

The STI270N4F3 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, one of the leading companies in the semiconductor industry. This device is part of the STripFET™ F3 series, which is renowned for its high efficiency and reliability in a wide range of applications.

Key Features

  • Low On-Resistance: The STI270N4F3 boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses. This feature makes it an excellent choice for applications that require high current handling with minimal power dissipation.
  • High Switching Performance: With fast switching speeds, this MOSFET is suitable for high-frequency power switching applications. This ensures that devices using the STI270N4F3 can achieve more efficient power conversion and regulation.
  • Robust Thermal Management: The STI270N4F3 comes in a TO-220 package, which is known for its excellent thermal characteristics. This enables the MOSFET to operate at higher temperatures without sacrificing performance, thereby providing a reliable solution for thermally demanding situations.
  • Low Gate Charge: The device has a low gate charge (Q<sub>g), which reduces the energy required to turn the transistor on and off. This feature contributes to the overall energy efficiency of the system in which it is used.
  • 100% Avalanche Tested: Ensuring ruggedness and reliability, the STI270N4F3 is guaranteed to withstand high-energy pulses in the avalanche and commutation modes, which is a testament to its durability and robustness.

Applications

The STI270N4F3 is versatile and can be used in a variety of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • High Current DC/DC Converters
  • Motor Control Circuits
  • Automotive Applications
  • Power Management Solutions

With its combination of high performance, efficiency, and reliability, the STI270N4F3 from STMicroelectronics is an ideal choice for designers looking to improve the performance of their power management systems. Whether it's for consumer electronics, automotive, or industrial applications, this power MOSFET is engineered to meet the most demanding requirements of modern electronic circuits.

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