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STIPN2M50T-HL

Part No STIPN2M50T-HL
Manufacturer STMicroelectronics
Catalog Power Drivers - Modules
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Power Driver Modules
Mfr STMicroelectronics
Series SLLIMM™
Package Tube
Type MOSFET
Configuration 3 Phase Inverter
Current 2 A
Voltage 500 V
Voltage - Isolation 1000Vrms
Mounting Type Through Hole
Package / Case 26-PowerDIP Module (0.573", 14.50mm)
Base Product Number STIPN2
Other Names -1138-STIPN2M50T-HL,497-17027,497-STIPN2M50T-HL,497-17027
Standard Package 17
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1279080-STIPN2M50T-HL
Ultra Librarian 3D Model Ultra Librarian STIPN2M50T-HL CAD Model

Description

STIPN2M50T-HL - High-Efficiency Power MOSFET by STMicroelectronics

The STIPN2M50T-HL is a state-of-the-art power MOSFET presented by STMicroelectronics, designed to meet the rigorous demands of today's high-performance power conversion applications. This device is part of ST's MDmesh™ M5 series, which is renowned for its exceptional efficiency, especially in hard-switching conditions. The STIPN2M50T-HL is optimized for a wide range of applications, including switch-mode power supplies (SMPS), lighting solutions, DC-DC converters, and high-efficiency energy management systems.

This advanced MOSFET features a breakdown voltage of 500V, which makes it suitable for high-voltage operations. It is built using ST's innovative MDmesh™ technology that combines a vertical structure with a strip layout, resulting in reduced on-resistance and minimal gate charge. These characteristics lead to lower conduction and switching losses, enhancing the overall efficiency of the power system in which it is deployed.

The STIPN2M50T-HL is encapsulated in a highly reliable package, the H2PAK-6L, which offers excellent thermal performance and is designed for use in challenging environments. The package's robust design ensures that the MOSFET can handle high current and power levels without compromising its operational integrity or lifespan.

Key specifications of the STIPN2M50T-HL include a max continuous drain current (ID) of 13 A, and a low gate threshold voltage, which allows for easy drive and fast switching performance. Its low on-resistance (Rds(on)) further contributes to its high efficiency, reducing power losses and heat generation during operation.

STMicroelectronics has equipped the STIPN2M50T-HL with built-in protection features such as avalanche ruggedness and 100% avalanche tested guarantees, ensuring reliable performance under extreme conditions. This MOSFET is also RoHS compliant and designed with the consideration for environmental standards, making it a suitable choice for eco-conscious applications.

In summary, the STIPN2M50T-HL power MOSFET from STMicroelectronics is a high-performance solution for designers looking to optimize their power management systems with a focus on efficiency, reliability, and environmental sustainability.

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