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STL10N60M6

Part No STL10N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Vgs (Max) ±25V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN
Base Product Number STL10
Other Names 497-19461-1,497-19461-2,497-19461-6
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278058-STL10N60M6
Ultra Librarian 3D Model Ultra Librarian STL10N60M6 CAD Model

Description

STL10N60M6 - High Performance N-Channel Power MOSFET from STMicroelectronics

The STL10N60M6 is a state-of-the-art N-Channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET utilizes ST's advanced MDmesh™ M6 technology, which combines high voltage capability with low on-resistance and high switching speed, making it an ideal choice for high-efficiency power management applications.

The STL10N60M6 boasts a 600V drain-source breakdown voltage (V<sub>DS), which ensures reliable operation even in high voltage environments. This feature is particularly beneficial for applications such as switch-mode power supplies (SMPS), lighting applications including LED drivers, and electronic ballasts, as well as for high-performance computing and telecom power systems.

With a continuous drain current (I<sub>D) of 10A and a low on-resistance (R<sub>DS(on)) of only 0.52Ω, this MOSFET provides efficient power handling capability. Its low gate charge (Q<sub>g) and low input capacitance (C<sub>iss) contribute to its fast switching performance, which is critical for reducing switching losses and improving overall system efficiency in high-frequency applications.

The STL10N60M6 comes in a surface-mount PowerFLAT™ 5x6 package, which not only saves space on the PCB but also enhances thermal performance due to its low package resistance. This compact package design enables designers to create smaller, more streamlined designs without compromising on power handling or thermal management.

Furthermore, this MOSFET is 100% avalanche tested, ensuring robustness and reliability in the field. Its high dv/dt capability provides additional protection against the harsh conditions that can occur during operation, making it a durable choice for industrial and rugged applications.

In summary, the STL10N60M6 from STMicroelectronics is a high-performance N-Channel Power MOSFET that combines high voltage capability, low on-resistance, and fast switching speed. Its advanced technology and package design make it suitable for a wide range of power applications, where efficiency, reliability, and compactness are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5615 $54.6525
80+ $1.2812 $102.4960
125+ $1.2412 $155.1500
170+ $1.2012 $204.2040
220+ $1.1611 $255.4420
290+ $1.0410 $301.8900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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