STL18N60M2 - N-channel 600 V, 18 A MDmesh™ M2 Power MOSFET

The STL18N60M2 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed using the innovative MDmesh™ M2 technology. This technology is based on an optimized vertical structure that achieves extremely low on-resistance and high dv/dt capability, making the STL18N60M2 an excellent choice for high-efficiency applications.

Key Features

• Breakdown Voltage (V<sub>BRDSS): 600 V, offering a wide safety margin for applications with high voltage requirements.
• Continuous Drain Current (I<sub>D): 18 A, ensuring the capability to handle significant power and current levels.
• Low On-Resistance (R<sub>DS(on)): This MOSFET has a very low on-resistance, which enhances its overall efficiency by reducing conduction losses.
• High dv/dt Capability: Suitable for fast switching applications, contributing to reduced switching losses.
• 100% Avalanche Tested: Guarantees robust performance and reliability in harsh conditions.

Applications

The STL18N60M2 is ideal for a broad range of high-voltage applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)

Product Advantages

The MDmesh™ M2 technology incorporated into the STL18N60M2 offers numerous advantages for designers. The low gate charge and reduced capacitances of this device result in minimized switching losses, while the high junction temperature capability enhances reliability even under extreme conditions. Furthermore, the STL18N60M2 is designed to be compatible with standard driving voltages, simplifying the integration into existing designs.

Quality and Environmental Compliance

STMicroelectronics is committed to delivering high-quality products that meet international standards. The STL18N60M2 adheres to RoHS and is Halogen-free, ensuring compliance with environmental regulations and promoting sustainability.