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STL3N10F7

Part No STL3N10F7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4A POWERFLAT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 100 V 4A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)
Manufacturer STMicroelectronics
Series DeepGATE™, STripFET™ VII
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-PowerWDFN
Case / Package PowerFlat™ (2x2)
Family Name STL3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-14993-1, -497-14993-2, 497-14993-2, 497-14993-1, 497-14993-6, -497-14993-6
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898090-STL3N10F7
Ultra Librarian 3D Model Ultra Librarian STL3N10F7 CAD Model

Description

The STL3N10F7 is a highly efficient, N-channel Power MOSFET designed and produced by STMicroelectronics, a leader in semiconductor solutions. This advanced power MOSFET is part of ST's STripFET F7 series, which is renowned for its low on-resistance and low gate charge, making it an ideal choice for a wide range of high-performance applications.

Key Features

  • Low Threshold Voltage: The STL3N10F7 features a low threshold voltage, which enhances its performance in logic-level drive applications and facilitates drive from low-voltage circuits.
  • High Switching Efficiency: With its low gate charge and low on-resistance, the MOSFET ensures high switching efficiency, which is crucial for reducing energy loss and improving power management in electronic systems.
  • 100% Avalanche Tested: This product has been rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the MOSFET is exposed to high-energy pulses.
  • Application Versatility: The STL3N10F7 is suitable for a broad range of applications, including DC-DC converters, motor control circuits, power management systems, and other high-efficiency switching applications.

Electrical Characteristics

With a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 3A, this MOSFET is capable of handling significant power levels. The low on-resistance, typically RDS(on) of 0.085 ohms, further contributes to its efficiency by minimizing conductive losses.

Package and Environment

The STL3N10F7 comes in a surface-mount PowerFLAT 5x6 package, which not only saves space but also offers excellent thermal performance. Furthermore, it is compliant with RoHS and Halogen-Free environmental standards, reflecting STMicroelectronics' commitment to environmental sustainability.

Conclusion

The STL3N10F7 Power MOSFET from STMicroelectronics is a testament to the company's dedication to providing advanced, energy-efficient power solutions. Its combination of low on-resistance, high switching efficiency, and robustness make it a go-to choice for engineers and designers looking to optimize their power systems for performance and reliability.

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