The STL9N65M2 is a high-performance, N-channel power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This MOSFET is part of STMicroelectronics' MDmesh™ M2 series, which is renowned for its excellent efficiency at low gate charge and low on-resistance.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, the STL9N65M2 is well-suited for high voltage applications, providing a robust and reliable solution for power conversion challenges.
• Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)) of 0.68 Ohm, maximizing efficiency and reducing conduction losses in a variety of applications.
• Reduced Gate Charge: A low gate charge (Q<sub>g) results in faster switching performance and reduced switching losses, making the STL9N65M2 highly efficient for high-frequency operations.
• Enhanced Switching Performance: The fast recovery diode characteristic of this MOSFET ensures improved switching performance, which is critical for applications requiring high switching frequencies.
• 100% Avalanche Tested: Guaranteeing the reliability of the MOSFET, each device is tested for avalanche ruggedness, ensuring it can withstand challenging conditions.

Applications

The STL9N65M2 is versatile and can be used in a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting applications
• High-efficiency DC-DC converters
• Power factor correction circuits
• Motor control applications

Package and Availability

The STL9N65M2 is available in a TO-220 package, which is widely used and suitable for through-hole mounting, making it easy to integrate into a variety of circuit designs. The package ensures sufficient heat dissipation for reliable operation under high-power conditions.

For designers and engineers looking for a robust and efficient power MOSFET solution, the STL9N65M2 from STMicroelectronics offers the perfect blend of high-voltage capability, low on-resistance, and fast switching performance to meet the demands of modern power applications.