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STO47N60M6

Part No STO47N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52.2 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 100 V
Power Dissipation (Max) 255W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TOLL (HV)
Package / Case 8-PowerSFN
Base Product Number STO47
Other Names STO47N60M6,497-STO47N60M6TR,497-STO47N60M6DKR,497-STO47N60M6CT
Standard Package 1,800
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278062-STO47N60M6
Ultra Librarian 3D Model Ultra Librarian STO47N60M6 CAD Model

Description

STO47N60M6 - High Performance Power MOSFET by STMicroelectronics

The STO47N60M6 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This MOSFET is part of the MDmesh™ M6 series, which is renowned for its excellent energy efficiency and performance in high-power, high-efficiency applications.

Featuring a drain-source voltage (V<sub>DS) of 650V, the STO47N60M6 is engineered for applications that require a high breakdown voltage. It is capable of handling continuous drain currents (I<sub>D) up to 47A, making it suitable for a wide range of power conversion systems, such as switch-mode power supplies (SMPS), lighting applications, welding equipment, and solar inverters.

The MOSFET's low on-resistance (R<sub>DS(on)) significantly reduces conduction losses, enhancing overall system efficiency. This feature, combined with a fast recovery diode, ensures reduced switching losses, making the STO47N60M6 an ideal choice for high-frequency operations. The device's robustness is further underscored by its high avalanche ruggedness, which provides reliable performance even under harsh conditions.

The STO47N60M6 is presented in a TO-247 long leads package, which offers excellent thermal performance and is well-suited for high-power applications. The package is designed to ensure easy mounting on a heatsink, which is crucial for maintaining thermal stability and prolonging the life of the MOSFET.

STMicroelectronics has integrated their latest technological advancements into the STO47N60M6, ensuring minimal gate charge (Q<sub>g) and low intrinsic capacitances, which contribute to faster switching speeds. This MOSFET also features Zener-protected gate, which provides enhanced protection against overvoltage, thereby increasing the reliability of the device.

In conclusion, the STO47N60M6 from STMicroelectronics is a powerful and reliable component that offers a blend of high performance, efficiency, and durability for advanced power management applications. Whether you're designing for industrial, consumer, or renewable energy markets, this MOSFET is an excellent choice to meet the demanding requirements of modern electronic systems.

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