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STP13N95K3

Part No STP13N95K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 950V 10A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 950V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1620pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103631-STP13N95K3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP13N95K3 CAD Model

Description

STP13N95K3 - N-channel MOSFET by STMicroelectronics

The STP13N95K3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This product is designed to meet the requirements of a wide range of applications, which demand high efficiency and reliability. It is a key component for power management tasks in electronic circuits, making it ideal for use in power supplies, converters, and motor control systems.

With a 950V drain-source breakdown voltage (V<sub>DS), the STP13N95K3 is able to handle high voltage operations, making it suitable for applications that operate under rigorous conditions. It features a low on-resistance (R<sub>DS(on)) of 0.85 Ω, which ensures minimal power loss during operation and enhances overall efficiency. The device is capable of a continuous drain current (I<sub>D) of 11 A, providing substantial current handling capability.

The STP13N95K3 is built using STMicroelectronics' advanced MDmesh™ K3 technology, which combines a vertical structure with a strip layout to achieve extremely low on-resistance and high switching performance. This technology is particularly effective in reducing conduction losses and improving the overall thermal performance of the device.

This MOSFET comes in a TO-220 package, which is widely used and recognized for its robustness and good thermal performance. The TO-220 package also allows for easy mounting on a printed circuit board (PCB) and is well-suited for through-hole technology, making it a convenient choice for both new designs and replacements in existing systems.

The device also includes a fast recovery diode, which is essential for high-speed switching applications. This feature allows the STP13N95K3 to switch off quickly, reducing energy losses and improving the performance of the application it is used in.

In summary, the STP13N95K3 from STMicroelectronics is a robust and efficient solution for high-voltage power applications that require a MOSFET with low on-resistance, high current capability, and fast switching performance. Its use of advanced technology and a convenient package makes it a versatile component for a multitude of electronic designs.

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