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RQ6L020SPTCR

Part No RQ6L020SPTCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 2A TSMT6 / P-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Packaging Reel - TR
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 10 V
Power Dissipation (Max) 1.25W
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Supplier Device Package TSMT6 (SC-95)
Case / Package SOT-23-6 Thin, TSOT-23-6
Base Product Number RQ6L020
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number RQ6L020SPTCRTR,RQ6L020SPTCRDKR,RQ6L020SPTCRCT
Standard Package 3,000
Win Source Part Number 1324642-RQ6L020SPTCR
Ultra Librarian 3D Model Ultra Librarian RQ6L020SPTCR CAD Model

Description

The Rohm Semiconductor RQ6L020SPTCR is a P-channel MOSFET transistor.

  • Drain to Source Voltage: 60 V
  • Continuous Drain Current: 2A @ 25°C
  • Rds On (Max): 210mOhm @ 2A, 10V
  • Vgs(th) (Max): 3V @ 1mA
  • Maximum Power Dissipation: 1.25W
  • Package: TSMT6 (SC-95)
  • Gate Charge (Qg) (Max): 7.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
  • AEC-Q200 Rated: Yes
  • RoHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.8736 $58.0816
66+ $1.7528 $115.6848
103+ $1.6925 $174.3275
147+ $1.5715 $231.0105
192+ $1.5111 $290.1312
239+ $1.4506 $346.6934
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,550 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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