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RF1S540SM

Part No RF1S540SM
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 3 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659824-RF1S540SM
Ultra Librarian 3D Model Ultra Librarian RF1S540SM CAD Model

Description

The RF1S540SM is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 28A @ 25°C
  • Rds On (Max): 77mOhm @ 17A and 10V
  • Power Dissipation: 150W
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Gate Charge (Qg): 59nC @ 10V
  • Input Capacitance (Ciss): 1450pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Manufacturer: Harris Corporation
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7835 $60.5360
38+ $3.1044 $117.9672
58+ $3.0074 $174.4292
80+ $2.9104 $232.8320
103+ $2.8133 $289.7699
138+ $2.5223 $348.0774
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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