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STP190N55LF3

Part No STP190N55LF3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 120A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 80nC @ 5V
Max Input Capacitance 6200pF @ 25V
Maximum Gate-Source Voltage ±18V
Power Dissipation (Max) 312W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 038053-STP190N55LF3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP190N55LF3 CAD Model

Description

STP190N55LF3 - Power MOSFET by STMicroelectronics

The STP190N55LF3 is a robust and high-performance power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is part of ST's STripFET™ F3 series, which is well-known for its low on-resistance and low gate charge, making it an ideal choice for a wide range of high-efficiency applications.

With a maximum drain-source voltage (V<sub>DS) of 55V, the STP190N55LF3 is capable of handling high power levels and is particularly suitable for applications requiring efficient power conversion and management. Its continuous drain current (I<sub>D) is rated at 120A at 25°C, ensuring that it can support high current loads without compromising performance.

The ultra-low on-resistance (R<sub>DS(on)) of this MOSFET, typically just 4.5 mΩ at 10V of gate-source voltage (V<sub>GS), is a standout feature that contributes to its high efficiency by minimizing conduction losses. This characteristic makes the STP190N55LF3 an excellent choice for applications such as DC/DC converters, motor control, and power management in computing and telecom systems.

Moreover, the STP190N55LF3 incorporates advanced technology that ensures fast switching performance, which is critical in reducing switching losses and improving overall system efficiency. This is complemented by its low gate charge (Q<sub>g), which allows for faster switching with lower driving power.

The device is encapsulated in a TO-220 package, which is widely used in the industry and known for its good thermal performance and ease of mounting on a printed circuit board (PCB). The package's design also provides excellent ruggedness and durability, which is essential for withstanding the harsh conditions often encountered in industrial and automotive environments.

STMicroelectronics has equipped the STP190N55LF3 with all the necessary protections, including 100% avalanche tested, to ensure reliable operation under extreme conditions. This commitment to quality and reliability, combined with the device's outstanding electrical characteristics, makes the STP190N55LF3 a top contender for designers and engineers looking to improve the efficiency and performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7969 $62.3597
30+ $3.9360 $118.0800
46+ $3.8130 $175.3980
63+ $3.6900 $232.4700
81+ $3.5670 $288.9270
109+ $3.1980 $348.5820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 950 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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