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STP200N6F3

Part No STP200N6F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 053920-STP200N6F3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP200N6F3 CAD Model

Description

STP200N6F3 - N-Channel MOSFET by STMicroelectronics

The STP200N6F3 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is designed to handle high currents and voltages efficiently, making it an ideal choice for a wide range of power applications. With its advanced technology and robust design, the STP200N6F3 provides excellent on-state resistance and high switching performance, which are critical for minimizing energy loss in power conversion systems.

Key Features

  • High Current Capability: The STP200N6F3 can handle continuous drain currents up to 120A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) of only 6 mΩ, this MOSFET ensures low conduction losses and improves overall efficiency.
  • High Voltage Tolerance: It can withstand drain-to-source voltages up to 60V, providing a good margin for applications with high voltage requirements.
  • Fast Switching Speed: The device features fast switching capabilities, which is vital for reducing switching losses in power converters and motor control applications.
  • 100% Avalanche Tested: Guarantees reliability and ruggedness, ensuring the MOSFET can handle tough conditions without failure.
  • Low Gate Charge: The low gate charge of the STP200N6F3 allows for efficient switching, which is crucial for high-frequency applications.
  • Enhanced Body Diode: Features a low reverse recovery time and charge, which is beneficial in bridge configurations and synchronous rectification.

Applications

The versatility of the STP200N6F3 makes it suitable for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control
  • Automotive Applications
  • Power Management Systems

Conclusion

The STP200N6F3 N-Channel MOSFET from STMicroelectronics is a powerful and reliable component for designers seeking to optimize power efficiency and performance in their electronic designs. Its combination of high current handling, low on-resistance, and fast switching characteristics make it an excellent choice for a multitude of power applications. With its robust construction and advanced features, the STP200N6F3 stands out as a top choice for engineers looking to enhance their power management solutions.

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