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STP22N60DM6

Part No STP22N60DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.6 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 100 V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP22
Standard Package 1,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278044-STP22N60DM6
Ultra Librarian 3D Model Ultra Librarian STP22N60DM6 CAD Model

Description

STP22N60DM6 - Power MOSFET by STMicroelectronics

The STP22N60DM6 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This robust and efficient MOSFET is designed to meet the demanding requirements of a broad range of electronic applications, including switch-mode power supplies, motor control, and power management systems.

Key Features

  • Advanced Technology: The STP22N60DM6 utilizes STMicroelectronics' advanced MDmesh™ DM6 technology, which combines excellent RDS(on) with reduced gate charge, ensuring high efficiency and improved switching performance.
  • Voltage and Current Ratings: With a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 22A, this Power MOSFET can handle high power applications with ease.
  • Low On-Resistance: The device features a low on-resistance (RDS(on)) of 190 mΩ max, which minimizes conduction losses and enhances overall efficiency.
  • High dv/dt Capability: Its high dv/dt capability ensures reliability in hard-switching applications and provides robustness against voltage transients.
  • Fast Recovery Diode: An integrated fast recovery diode provides additional protection during inductive load switching, further enhancing the reliability of the device.

Applications

  • Switch-mode power supplies (SMPS)
  • LED lighting
  • Uninterruptible power supplies (UPS)
  • High-efficiency DC-DC converters
  • Motor control applications
  • Power factor correction circuits

Package and Thermal Management

The STP22N60DM6 is housed in a TO-220 package, known for its excellent thermal performance, making it suitable for high-power and high-temperature operating conditions. The package design allows for efficient heat dissipation, ensuring the device operates within its specified temperature range for optimal performance and longevity.

Environmental and Quality Assurance

STMicroelectronics is committed to environmental responsibility and the STP22N60DM6 complies with international standards such as RoHS and is designed to meet the requirements for industrial-grade components. Quality and reliability are paramount, and this Power MOSFET is rigorously tested to ensure it meets the high standards expected by electronic designers and engineers.

Overall, the STP22N60DM6 from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it an excellent choice for power conversion and management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6798 $58.9556
53+ $2.1989 $116.5417
82+ $2.1302 $174.6764
113+ $2.0614 $232.9382
145+ $1.9928 $288.9560
194+ $1.7866 $346.6004
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Availability: 7,480 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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