The STP26N65DM2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed using ST's advanced MDmesh™ DM2 technology, which combines high voltage capability with low on-resistance and high switching speed, making it ideal for a wide range of power applications.

Key Features

• Voltage Rating: The STP26N65DM2 boasts a high drain-source voltage (V<sub>DS) of 650V, providing a robust solution for applications requiring high voltage operation.
• Current Capability: It can handle a continuous drain current (I<sub>D) of up to 26A, making it capable of powering demanding circuits.
• Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 0.190 Ω, it ensures high efficiency and low conduction losses.
• Fast Switching Speed: The fast switching characteristics reduce switching losses and improve performance in high-frequency applications.
• Advanced Technology: Utilizing MDmesh™ DM2 technology, it achieves optimal performance by combining low gate charge (Q<sub>g), low crss, and high dv/dt capability.

Applications

The STP26N65DM2 is suitable for an array of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED lighting
• High-efficiency converters
• Welding equipment
• Solar inverters
• Uninterruptible Power Supplies (UPS)

Package and Quality

This MOSFET is housed in a TO-220 package, which is widely used and known for its good thermal performance. The TO-220 package ensures that the device can handle high power levels and dissipate heat effectively. STMicroelectronics is committed to delivering high-quality products, and the STP26N65DM2 is no exception. It is designed to meet stringent quality and reliability standards, ensuring long-term performance in various applications.

For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to consult the official datasheets and product documentation available from STMicroelectronics.