The STP26N65DM2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed using ST's advanced MDmesh™ DM2 technology, which combines high voltage capability with low on-resistance and high switching speed, making it ideal for a wide range of power applications.
Key Features
- Voltage Rating: The STP26N65DM2 boasts a high drain-source voltage (V<sub>DS) of 650V, providing a robust solution for applications requiring high voltage operation.
- Current Capability: It can handle a continuous drain current (I<sub>D) of up to 26A, making it capable of powering demanding circuits.
- Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 0.190 Ω, it ensures high efficiency and low conduction losses.
- Fast Switching Speed: The fast switching characteristics reduce switching losses and improve performance in high-frequency applications.
- Advanced Technology: Utilizing MDmesh™ DM2 technology, it achieves optimal performance by combining low gate charge (Q<sub>g), low crss, and high dv/dt capability.
Applications
The STP26N65DM2 is suitable for an array of applications, including:
- Switch Mode Power Supplies (SMPS)
- LED lighting
- High-efficiency converters
- Welding equipment
- Solar inverters
- Uninterruptible Power Supplies (UPS)
Package and Quality
This MOSFET is housed in a TO-220 package, which is widely used and known for its good thermal performance. The TO-220 package ensures that the device can handle high power levels and dissipate heat effectively. STMicroelectronics is committed to delivering high-quality products, and the STP26N65DM2 is no exception. It is designed to meet stringent quality and reliability standards, ensuring long-term performance in various applications.
For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to consult the official datasheets and product documentation available from STMicroelectronics.
