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STP26NM60N

Part No STP26NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1800pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 031465-STP26NM60N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Safety
Family Name STP26NM60N
Introduction Date April 29, 2009
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian STP26NM60N CAD Model

Description

The STP26NM60N is a high performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver efficient power conversion with low on-state resistance and fast switching performance. It is an ideal choice for a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-AC inverters, and motor control.

Key Features

  • Voltage Rating: The STP26NM60N is rated for a drain-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
  • Current Handling: It can handle continuous drain current (I<sub>D) up to 20A, ensuring robust performance for heavy-duty operations.
  • Low R<sub>DS(on): With an on-state resistance as low as 0.165Ω, it provides high efficiency and minimizes power losses during operation.
  • Fast Switching: The device features a fast switching speed, which is crucial for reducing switching losses and improving power supply efficiency.
  • High dv/dt Capability: The MOSFET can withstand high voltage changes over time (dv/dt), making it reliable in applications with high switching frequencies.

Advanced Technology

STMicroelectronics has integrated their state-of-the-art MDmesh™ II technology into the STP26NM60N, which combines a vertical structure with a strip layout to achieve a better trade-off between on-resistance and gate charge. This results in superior switching performance and lower conduction losses.

Applications

  • Power Supply Units (PSUs)
  • LED Lighting Systems
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • High Performance Drives
  • Welding Equipment

Package and Environmental Compliance

The STP26NM60N is available in a TO-220 package, which is widely used and easy to mount on printed circuit boards. Additionally, STMicroelectronics is committed to environmental sustainability, and the STP26NM60N is designed to meet RoHS and other environmental regulations, reducing the environmental impact.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1900 $53.5500
105+ $0.9764 $102.5220
160+ $0.9459 $151.3440
220+ $0.9154 $201.3880
285+ $0.8849 $252.1965
380+ $0.7934 $301.4920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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