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STP2N80K5

Part No STP2N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 3nC @ 10V
Max Input Capacitance 95pF @ 100V
Maximum Gate-Source Voltage 30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 137800-STP2N80K5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP2N80K5 CAD Model

Description

The STP2N80K5 is a robust and high-performance Power MOSFET designed by STMicroelectronics, a leader in semiconductor solutions. This device is part of ST's MDmesh™ K5 series, which utilizes advanced technology to provide excellent RDS(on) per area combined with superior switching performance. The STP2N80K5 is particularly suited for high efficiency applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, and more.

Key Features

  • Voltage Rating: The STP2N80K5 boasts a maximum drain-source voltage (V<sub>DS) of 800V, making it suitable for high-voltage applications.
  • Current Handling: This MOSFET can handle continuous drain current (I<sub>D) up to 2A, ensuring reliable performance in a variety of circuits.
  • Low Gate Charge: A low gate charge (Q<sub>g) minimizes switching losses, which is crucial for high-efficiency power designs.
  • Low On-Resistance: The device features an extremely low on-state resistance (RDS(on)) for its voltage class, reducing conduction losses and improving overall efficiency.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
  • Zener-Protected Gate: The gate is protected with a built-in Zener diode, offering enhanced safety against electrostatic discharge (ESD) and voltage spikes.

Applications

The versatility of the STP2N80K5 allows it to be used in a wide array of applications. It is ideal for high-efficiency converters found in telecom and server power supplies. Its robustness also makes it suitable for industrial applications, such as motor drives, solar inverters, and welding equipment. Additionally, its high voltage capability is perfect for lighting applications, including electronic ballasts for fluorescent lighting or LED drivers.

Package and Quality

The STP2N80K5 is offered in a TO-220 package, which is widely used for commercial and industrial applications due to its ease of installation and excellent thermal performance. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception, meeting stringent quality and reliability standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7927 $59.4525
180+ $0.6505 $117.0900
275+ $0.6302 $173.3050
380+ $0.6098 $231.7240
490+ $0.5895 $288.8550
660+ $0.5285 $348.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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