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STD5406NT4G

Part No STD5406NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 12.2A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 12.2A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2500pF @ 32V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031149-STD5406NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD5406NT4G CAD Model

Description

ON Semiconductor STD5406NT4G Overview

The STD5406NT4G is a high-performance N-channel Trench MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This power MOSFET is engineered to deliver efficient power management and conversion in a compact and energy-efficient package. It is widely used in a variety of applications, including power supplies, DC-DC converters, motor drives, and other power-intensive electronic circuits.

Key Features

  • Low On-Resistance: The STD5406NT4G features a very low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power losses during operation.
  • High Current Capability: This MOSFET is capable of handling high continuous drain currents, making it suitable for applications requiring robust power handling capabilities.
  • High-Speed Switching: With fast switching performance, the STD5406NT4G is ideal for high-frequency power switching applications.
  • Low Gate Charge: The device's low gate charge (Q<sub>g) allows for reduced switching losses and improved overall efficiency.
  • Robust Thermal Performance: The MOSFET is designed to operate reliably over a wide temperature range, thanks to its excellent thermal characteristics.
  • Surface Mount Package: The STD5406NT4G comes in a DPAK (TO-252) surface mount package, which is suitable for automated assembly processes and saves board space.

Applications

The versatile nature of the STD5406NT4G MOSFET makes it a perfect choice for a wide array of electronic applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Management Systems
  • DC-to-DC Converters
  • Motor Control Circuits
  • Automotive Systems and Load Switches
  • LED Lighting Solutions

Product Specifications

The STD5406NT4G boasts a drain-to-source voltage (V<sub>DSS) of 60V, a continuous drain current (I<sub>D) of 33A, and a power dissipation (P<sub>D) of 48W. Its threshold voltage (V<sub>GS(th)) ranges from 1.0V to 2.5V, which allows for low-voltage operation. The device is also characterized by a 100% avalanche tested guarantee, ensuring its reliability and robustness in harsh conditions.

With its combination of high performance, efficiency, and reliability, the STD5406NT4G from ON Semiconductor is an excellent choice for designers looking to optimize their power management and conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4530 $58.1200
100+ $1.1923 $119.2300
150+ $1.1550 $173.2500
210+ $1.1177 $234.7170
270+ $1.0805 $291.7350
360+ $0.9687 $348.7320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,680 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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