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STP2NK100Z

Part No STP2NK100Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 1.85A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 35 Weeks
Features N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series SuperMESH™
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP2NK100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-7518-5, STP2NK100Z-ND, 497-STP2NK100Z, 497-7518-5-ND, -1138-STP2NK100Z
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898323-STP2NK100Z
Ultra Librarian 3D Model Ultra Librarian STP2NK100Z CAD Model

Description

STP2NK100Z - N-Channel MOSFET by STMicroelectronics

The STP2NK100Z is a high-performance N-channel MOSFET brought to you by STMicroelectronics, a leader in the semiconductor industry. This power MOSFET is designed to deliver the efficiency and speed needed for a range of power applications. It is particularly well-suited for high voltage operations with a drain-source voltage (V<sub>DS) of 1000V, which makes it an excellent choice for electronic circuits requiring high voltage thresholds.

With a continuous drain current (I<sub>D) of 2A, the STP2NK100Z can handle a moderate amount of current, making it versatile for various applications. The device boasts a low on-resistance (R<sub>DS(on)) of 4.5Ω, which ensures minimal power loss and heat generation when conducting electricity. This feature is critical for maintaining efficiency and reliability in power management systems.

The STP2NK100Z comes in a TO-220 package, which is widely used and favored for its ease of mounting and good thermal performance. The TO-220 package allows for efficient heat dissipation, which is vital for maintaining the longevity and performance of the MOSFET under high-power conditions.

Additionally, the MOSFET features fast switching capabilities, which is essential for reducing switching losses in high-frequency power converters and other applications that require rapid switching. This fast switching also contributes to the overall efficiency of the system by reducing transition times.

STMicroelectronics has equipped the STP2NK100Z with avalanche ruggedness, which means it can withstand high-energy pulses in the avalanche and commutation modes. This ruggedness is valuable for applications that may experience unexpected voltage spikes, as it ensures that the MOSFET will remain reliable under stressful conditions.

In summary, the STP2NK100Z N-Channel MOSFET from STMicroelectronics is a robust and efficient solution for high-voltage applications. Its combination of high voltage capacity, low on-resistance, fast switching, and avalanche ruggedness makes it a top choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9803 $58.8180
145+ $0.8043 $116.6235
225+ $0.7793 $175.3425
310+ $0.7541 $233.7710
400+ $0.7290 $291.6000
535+ $0.6535 $349.6225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,350 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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