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STP36N60M6

Part No STP36N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 600V 30A TO220 / N-Channel 600 V 30A (Tc) 208W (Tc) Through Hole TO-220
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44.3 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP36
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -1138-STP36N60M6,497-17552,2266-STP36N60M6
Standard Package 50
Win Source Part Number 993106-STP36N60M6
Ultra Librarian 3D Model Ultra Librarian STP36N60M6 CAD Model

Description

STP36N60M6 - N-channel 600 V, 0.095 Ω typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220 package

The STP36N60M6 is a high-performance N-channel Power MOSFET presented by STMicroelectronics. It is part of the MDmesh™ M6 series, which is renowned for its excellent energy efficiency and performance in high-voltage applications. With a drain-source voltage (VDS) of 600 V, this MOSFET is designed to handle high power and high voltage with ease, making it suitable for a broad range of applications, including switch-mode power supplies, lighting, welding, and high-performance drives.

The MOSFET features a very low on-resistance (RDS(on)) of 0.095 Ω typical, which contributes to its high efficiency by minimizing conduction losses. The device can sustain a continuous drain current (ID) of up to 30 A, allowing it to manage significant power throughput without overheating.

The STP36N60M6 is encapsulated in a TO-220 package, which is widely used in the industry for its robustness and excellent thermal performance. This package helps to ensure reliable operation even under demanding conditions. Additionally, the device benefits from STMicroelectronics' state-of-the-art MDmesh™ technology, which utilizes a proprietary vertical structure that enhances switching performance and thermal behavior.

This Power MOSFET also integrates a fast recovery diode, which is optimized for high-frequency and high-efficiency converters. The diode's fast recovery time reduces switching losses and improves overall system efficiency.

Designers can take advantage of the STP36N60M6's features to create compact and efficient power conversion systems. Its high switching speed and low gate charge (QG) make it ideal for high-frequency applications, while its ruggedness and reliability ensure long-term performance. The MOSFET also exhibits excellent dv/dt capability and immunity against avalanche breakdown, providing additional protection in harsh environments.

Overall, the STP36N60M6 from STMicroelectronics is a powerful and reliable component for designers looking to optimize their high-voltage power conversion systems for efficiency and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8844 $52.9596
21+ $4.8283 $101.3943
33+ $4.6774 $154.3542
45+ $4.5265 $203.6925
58+ $4.3756 $253.7848
77+ $3.9230 $302.0710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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