STP3LN62K3 - N-Channel MOSFET by STMicroelectronics
The STP3LN62K3 is a robust and efficient N-channel MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is a part of the MDmesh™ K3 series, which is renowned for its high commutation ruggedness, making it an ideal choice for a wide range of high-efficiency applications.
Key Features
- Voltage Rating: The device boasts a 620V drain-source breakdown voltage (V<sub>DS), providing a comfortable margin for applications with high voltage requirements.
- Current Capacity: It can handle continuous drain current (I<sub>D) up to 3A, making it suitable for moderate power handling applications.
- Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 1.25Ω, the STP3LN62K3 ensures reduced conduction losses and improved efficiency.
- High dv/dt Capability: Designed to withstand high voltage transients, this MOSFET is equipped with a fast switching capability, ensuring reliability in demanding scenarios.
- Enhanced Body Diode: Features a fast and robust body diode, which is a significant advantage in applications requiring efficient freewheeling or reverse recovery operations.
Applications
The STP3LN62K3 is versatile and can be used in a variety of applications including:
- Switch Mode Power Supplies (SMPS)
- LED lighting systems
- High-efficiency DC-DC converters
- Motor control circuits
- Power management solutions
Package and Quality
The STP3LN62K3 comes in a TO-220 package, which is widely used and known for its ease of mounting and good thermal performance. STMicroelectronics ensures high standards of quality and reliability for the STP3LN62K3, making it a trustworthy component for both industrial and consumer applications.
Environmental Compliance
Committed to environmental sustainability, STMicroelectronics has designed the STP3LN62K3 to meet various environmental standards. It is compliant with RoHS (Restriction of Hazardous Substances) and is designed to be used in applications that require eco-friendly materials.