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STP4NB50

Part No STP4NB50
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3.8A TO-220
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 2.8 Ohm @ 1.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 054267-STP4NB50
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP4NB50 CAD Model

Description

STP4NB50 - N-Channel 500V - 1.0Ω - 4A TO-220/TO-220FP Power Mesh™ MOSFET

The STP4NB50 from STMicroelectronics is a high-voltage N-channel Power MOSFET designed to offer the best in class performance for efficiency and reliability in a wide range of applications. This Power MOSFET is part of the Power Mesh™ line, which utilizes an innovative proprietary vertical structure that delivers extremely low on-resistance and optimized switching characteristics, making it ideal for high-efficiency power supplies, lighting, and other demanding applications.

With a breakdown voltage of 500V, the STP4NB50 is suitable for high voltage applications, providing a robust and efficient solution for managing power. The device features an on-resistance of just 1.0Ω, which ensures minimal power loss during operation, contributing to the overall efficiency of the system it is incorporated into. The MOSFET is capable of handling continuous currents up to 4A, making it a reliable choice for handling moderate power levels.

The STP4NB50 comes in a TO-220/TO-220FP package, which is widely used in the industry and known for its good thermal performance. This allows the MOSFET to operate at lower temperatures, enhancing its longevity and reliability. The package is designed to be easily mounted onto heatsinks, which further helps in heat dissipation for applications that require extended operation under high load conditions.

One of the key features of this MOSFET is its fast switching speed, which is critical for reducing switching losses and improving the performance of power conversion systems. This makes the STP4NB50 an excellent choice for high-frequency applications, including switched-mode power supplies and DC-AC inverters for renewable energy systems.

For protection and ease of use, the STP4NB50 is equipped with an avalanche ruggedness that safeguards the device against unexpected voltage spikes. Additionally, its gate charge is optimized to achieve the right balance between switching speed and gate driving requirements, which simplifies the design of driving circuits.

In summary, the STP4NB50 from STMicroelectronics is a robust, high-voltage MOSFET that offers excellent performance for a variety of power applications. Its low on-resistance, high breakdown voltage, and fast switching capabilities make it a top choice for designers looking to optimize their power management solutions.

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