The STP4NB80 is a high voltage N-channel Power MOSFET produced using STMicroelectronics' advanced PowerMESH™ technology. This device is tailored for high performance switching applications, offering an optimal combination of features that enhance energy efficiency, lower on-resistance, and provide superior switching performance.

Key Features

• Voltage Rating: The STP4NB80 operates at a drain-source voltage of 800V, making it suitable for high voltage applications.
• Current Handling: This MOSFET can handle continuous drain current up to 4A, ensuring robust performance for a wide range of power requirements.
• Low On-Resistance: With an on-resistance of only 3Ω, the STP4NB80 provides excellent conductivity while minimizing heat generation and power loss.
• High dv/dt Capability: The device is designed to withstand high voltage transients, providing reliable operation in environments with rapid voltage changes.
• Improved Gate Charge: The reduced gate charge enables faster switching speeds, which is essential for efficient power conversion in modern electronic circuits.

Applications

The STP4NB80 is ideal for a variety of applications, including:

• Switching applications
• Power supplies
• Motor control
• Lighting
• Inverters
• High voltage circuits

Package Options

The STP4NB80 is available in two package types:

1. TO-220 package for easy mounting and heat dissipation.
2. TO-220FP package with an isolated back surface for direct mounting on heatsinks.

Its advanced technology and robust design make the STP4NB80 a reliable choice for designers seeking to optimize power management in their high voltage applications. With its exceptional electrical characteristics, this Power MOSFET from STMicroelectronics stands out as a leading component in the field of power electronics.