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STP6N120K3

Part No STP6N120K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 6A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1050pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 2.4 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103702-STP6N120K3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STP6N120K3
Introduction Date April 15, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP6N120K3 CAD Model

Description

STP6N120K3 - N-channel 1200 V, 6 A, 3 Ω SuperMESH™ Power MOSFET

The STP6N120K3 is a high voltage N-channel Power MOSFET designed by STMicroelectronics to deliver the best in class performance for high efficiency and power density. This Power MOSFET is part of the SuperMESH™ family, which is well-known for its unique combination of high voltage capability, low on-resistance, and fast switching speed. This makes the STP6N120K3 an ideal choice for a wide range of high-voltage applications, including switching power supplies, motor control, and lighting systems.

Key Features

  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 1200 V, the STP6N120K3 is suitable for high voltage applications that require a robust and reliable power MOSFET.
  • Low On-Resistance: The device boasts an on-resistance (R<sub>DS(on)) of only 3 Ω, which helps to minimize conduction losses and enhance overall efficiency.
  • High Current Capability: It can handle continuous drain current (I<sub>D) up to 6 A, making it capable of driving moderate to high loads.
  • Fast Switching Speed: The device's fast switching characteristics ensure efficient operation at high frequencies, which is beneficial for applications like switch-mode power supplies.
  • Zener-Protected Gate: The gate of the STP6N120K3 is protected with an integrated Zener diode, which helps to safeguard the device against electrostatic discharge (ESD) and other voltage-induced damages.

Applications

The STP6N120K3 Power MOSFET is versatile and can be used in a variety of applications, including:

  • Switching power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Electronic lamp ballasts for fluorescent lighting
  • Motor control circuits
  • High-efficiency DC-DC converters
  • Inverter circuits for renewable energy sources

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STP6N120K3 is manufactured with state-of-the-art technology and undergoes rigorous testing to ensure it meets these standards. Customers can rely on this Power MOSFET to deliver consistent performance over its intended lifespan.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.5125 $62.5625
12+ $10.2667 $123.2004
18+ $9.9459 $179.0262
24+ $9.6251 $231.0024
32+ $9.3042 $297.7344
42+ $8.3416 $350.3472
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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