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STP80NE06-10

Part No STP80NE06-10
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-220
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 10000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 40A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 053945-STP80NE06-10
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP80NE06-10 CAD Model

Description

The STP80NE06-10 is a high-performance Power MOSFET presented by STMicroelectronics, designed to meet a wide range of applications requiring high efficiency and reliability. This device is part of the N-channel enhancement mode MOSFETs which are well-known for their exceptional power handling capabilities and are widely used in power conversion and management solutions.

Key Features

  • Low On-Resistance: The STP80NE06-10 boasts a very low on-resistance (RDS(on)), which significantly reduces conduction losses and improves overall efficiency, making it ideal for high-performance power switching applications.
  • High Current Capability: With a continuous drain current (ID) of 80A, this MOSFET can handle high current loads with ease, ensuring reliable operation in demanding situations.
  • High Voltage Threshold: The device can sustain a drain-source voltage (VDS) of up to 60V, providing a good safety margin for applications operating at lower voltages.
  • Fast Switching Speed: The fast switching characteristics of the STP80NE06-10 make it suitable for high-frequency power converters and other applications where speed is critical.
  • Low Gate Charge: A reduced gate charge (Qg) allows for lower switching losses and easier drive, which contributes to the overall system efficiency.
  • Robust Thermal Performance: The device features an excellent thermal resistance, ensuring stable performance even under high temperature operations.

Applications

The STP80NE06-10 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-to-DC converters
  • Motor Control Circuits
  • Automotive and Industrial Load Switches
  • Power Management Systems

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STP80NE06-10 is no exception, as it is manufactured using advanced processing techniques and rigorous testing to ensure it performs to specifications under varying conditions.

With its combination of efficiency, power handling, and reliability, the STP80NE06-10 is a smart choice for designers looking to optimize their power systems for performance and cost.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8769 $65.6915
75+ $1.5408 $115.5600
120+ $1.4923 $179.0760
160+ $1.4438 $231.0080
210+ $1.3964 $293.2440
280+ $1.2520 $350.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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