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2SB815-7-TB-E

Part No 2SB815-7-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 15V 0.7A CP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 700mA
Voltage - Collector Emitter Breakdown (Maximum) 15V
Vce Saturation (Maximum) @ Ib, Ic 80mV @ 10mA, 100mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 300 @ 50mA, 2V
Power - Max 200mW
Frequency - Transition 250MHz
Operating Temperature Range 125°C (TJ)
Mounting SMD
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Package 3-CP
Win Source Part Number 762536-2SB815-7-TB-E
Family Name 2SB815
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB815-7-TB-E CAD Model

Description

The ON Semiconductor 2SB815-7-TB-E is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is recognized for its reliability and efficiency, making it an excellent choice for designers and engineers looking to enhance their circuits with a robust transistor option.

The 2SB815-7-TB-E transistor offers a collector-emitter voltage (VCEO) of -60V, which ensures it can handle significant voltage levels without compromising performance. Its collector current (IC) capability of up to -3A makes it suitable for higher current applications, providing ample room for a variety of electronic designs. Moreover, the device features a power dissipation of 2W, which is indicative of its ability to dissipate heat effectively, ensuring stable operation even under stressful conditions.

With its hFE (DC current gain) rated at 100-320, this PNP transistor can amplify weak signals with high efficiency, making it an ideal choice for amplification stages in audio devices, signal processing, and other applications requiring signal amplification. Additionally, it boasts a fast switching speed, which is critical for applications that require quick transitions between on and off states, such as switching regulators and digital circuits.

The 2SB815-7-TB-E comes in a TO-220B package, which is widely used in the industry due to its ease of mounting and good thermal performance. The package is designed to be robust, ensuring long-term reliability and durability, which is crucial for products that are expected to perform consistently over time.

ON Semiconductor's commitment to quality is reflected in the 2SB815-7-TB-E, as it is manufactured to meet high standards for stability and performance. This product is suitable for various applications, including power management, consumer electronics, industrial control systems, and more. Whether you're designing an intricate power supply or a simple motor control circuit, the 2SB815-7-TB-E provides the functionality and reliability needed to get the job done.

Overall, the ON Semiconductor 2SB815-7-TB-E PNP transistor is a versatile component that combines high power handling, efficient amplification, and fast switching speed, making it a valuable addition to any electronic project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,670+ $0.0347 $57.9490
4,170+ $0.0277 $115.5090
6,250+ $0.0277 $173.1250
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 1670 pcs
Order Increment : 1 pcs
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