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STP80NF55L-06

Part No STP80NF55L-06
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 80A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 136nC @ 5V
Max Input Capacitance 4850pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 031470-STP80NF55L-06
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STP80NF55L-06
Introduction Date October 12, 1999
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STP80NF55L-06 CAD Model

Description

STP80NF55L-06 - STMicroelectronics

The STP80NF55L-06 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable electronic components. This power MOSFET is a part of ST's STripFET™ series, which is renowned for its low on-resistance and high switching performance.

With a maximum drain-source voltage (VDS) of 55V, the STP80NF55L-06 is well-suited for a wide range of applications that require efficient power management. It can handle continuous drain currents (ID) up to 80A, making it a robust choice for high-current circuits. The device also features a low threshold voltage, ensuring that it can be driven at lower gate voltages, which is beneficial for battery-operated devices and low-voltage circuits.

The STP80NF55L-06 boasts an extremely low on-resistance (RDS(on)) of just 8.0 mΩ (max) at a gate voltage of 10V. This low on-resistance minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive applications. Additionally, the MOSFET's 100% avalanche tested design ensures reliability and robustness under harsh conditions.

Its package is TO-220, a widely used and easily mountable form factor that provides good thermal performance and is compatible with various types of heat sinks. This package makes the STP80NF55L-06 a versatile component for both hobbyist projects and commercial products.

Applications for the STP80NF55L-06 are diverse and include switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, and general-purpose switching applications. Its high efficiency and reliability make it an excellent choice for designers looking to optimize their power management systems.

In summary, the STP80NF55L-06 from STMicroelectronics is a powerful, efficient, and reliable N-channel MOSFET that offers low on-resistance, high current handling, and robust performance in a range of electronic applications. Its compatibility with low gate voltages and thermal efficiency makes it a go-to component for engineers and designers looking for quality power transistors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8769 $65.6915
75+ $1.5408 $115.5600
120+ $1.4923 $179.0760
160+ $1.4438 $231.0080
210+ $1.3964 $293.2440
280+ $1.2520 $350.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,790 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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