The STP8N80K5 is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of STMicroelectronics' MDmesh™ K5 series, which is known for its excellent efficiency and performance in high-voltage applications.

Key Features

• Voltage Rating: The STP8N80K5 has a drain-source voltage (V_DS) rating of 800V, making it suitable for handling high-voltage tasks in power conversion circuits.
• Current Capacity: It can sustain a continuous drain current (I_D) of up to 8A, allowing it to drive significant loads.
• Low On-Resistance: With an on-resistance (R_DS(on)) as low as 0.85 ohms, this MOSFET ensures minimal power loss and improved efficiency in applications.
• Fast Switching: The device features fast switching capabilities, which is critical for reducing switching losses in power supply applications.
• Reduced Gate Charge: A low gate charge (Q_g) enhances the STP8N80K5's performance by allowing for faster switching speeds and reduced power consumption during operation.

Applications

The STP8N80K5 is designed for a wide range of applications, particularly those requiring high efficiency and power density. Its typical uses include:

• Switching power supplies
• LED lighting applications
• High-efficiency DC-DC converters
• Motor control systems
• Power management solutions

Advanced Technology

This MOSFET leverages STMicroelectronics' innovative MDmesh™ K5 technology, which combines the benefits of reduced conduction losses with zero recovery charge. This technology is especially advantageous in resonant and soft-switching topologies. The STP8N80K5 also features a robust and rugged design, which ensures reliability and longevity in harsh environments.

Package and Availability

The STP8N80K5 is available in a TO-220 package, which is widely used and easy to integrate into various circuit designs. Its lead-free and RoHS-compliant construction aligns with environmental standards and global regulations for electronic components.