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STQ1HN60K3-AP

Part No STQ1HN60K3-AP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 400MA TO92-3 / N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH3™
Package Cut Tape (CT),Tape & Box (TB)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 50 V
Power Dissipation (Max) 3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number STQ1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-13784-3,-497-13784-1,497-13784-1,497-13784-3
Standard Package 2,000
Win Source Part Number 1154003-STQ1HN60K3-AP
Ultra Librarian 3D Model Ultra Librarian STQ1HN60K3-AP CAD Model

Description

STQ1HN60K3-AP - N-Channel 600V - 1.2 Ohm - 1A SuperMESH3™ Power MOSFET

The STQ1HN60K3-AP is a state-of-the-art N-Channel Power MOSFET from STMicroelectronics, designed utilizing the company's innovative SuperMESH3™ technology. This technology combines the benefits of reduced on-resistance, low gate charge, and exceptional ruggedness, making the STQ1HN60K3-AP an ideal choice for high-efficiency power management solutions.

Key Features:

  • High Blocking Voltage: With a drain-source voltage of 600V, the STQ1HN60K3-AP can handle high voltage applications, ensuring reliability in a variety of power conversion systems.
  • Low On-Resistance: Featuring an on-resistance of only 1.2 Ohms, this MOSFET offers minimal conduction losses, which is crucial for improving the overall efficiency of the circuit.
  • High Current Capability: The device can support a continuous drain current of 1A, suitable for a range of light to medium power applications.
  • Zener-protected: The built-in Zener diode provides protection against electrostatic discharge (ESD), enhancing the durability of the device in harsh environments.

Applications:

The versatility of the STQ1HN60K3-AP allows it to be used in various applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting applications
  • High-efficiency DC-DC converters
  • Motor control circuits
  • Power management functions within consumer and industrial electronics

Package and Mounting:

The STQ1HN60K3-AP comes in a through-hole IPAK package, which is widely used and recognized for its ease of mounting and suitability for prototyping as well as mass production. This package ensures good heat dissipation and robust mechanical protection, contributing to the reliability of the end-product.

STMicroelectronics Quality:

As a product of STMicroelectronics, a global semiconductor leader, the STQ1HN60K3-AP benefits from the company's commitment to delivering high-quality and performance-driven components. Users can expect consistent performance and longevity, backed by thorough testing and compliance with industry standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4598 $59.7740
310+ $0.3774 $116.9940
475+ $0.3656 $173.6600
655+ $0.3538 $231.7390
845+ $0.3420 $288.9900
1,130+ $0.3067 $346.5710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,820 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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