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STU7N60M2

Part No STU7N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 600 V 5A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
Manufacturer STMicroelectronics
Series MDmesh™ II Plus
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-251-3 Short Leads, IPak, TO-251AA
Case / Package TO-251 (IPAK)
Family Name STU7N60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-13979-5, STU7N60M2-ND, -497-13979-5
Quantity per package 75
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898496-STU7N60M2
Ultra Librarian 3D Model Ultra Librarian STU7N60M2 CAD Model

Description

STU7N60M2 Power MOSFET by STMicroelectronics

The STU7N60M2 is a robust and efficient power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance transistor is part of STMicroelectronics' MDmesh™ M2 series, which is renowned for its excellent energy efficiency and thermal performance. The STU7N60M2 is particularly suited for a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-DC converters, and motor control circuits.

Key Features:

  • High Voltage Capability: The STU7N60M2 is designed to handle high voltages, with a drain-source voltage (V<sub>DS) of up to 600V, making it suitable for various industrial and consumer applications that require high voltage operations.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 1.2 Ω, this MOSFET ensures minimal power loss during operation, contributing to the overall efficiency of the electronic system.
  • High Current Rating: The device can support a continuous drain current (I<sub>D) of up to 7A, allowing it to handle significant power levels for a range of electrical tasks.
  • Fast Switching Speed: The STU7N60M2 boasts a fast switching speed, which is essential for reducing switching losses in high-frequency power conversion systems.
  • Low Gate Charge: A low gate charge (Q<sub>g) ensures that the MOSFET can be driven at lower voltages, which reduces the power needed to switch the device on and off, thereby saving energy.

Advanced Technology:

The MDmesh™ M2 technology incorporated in the STU7N60M2 utilizes a proprietary vertical structure that optimizes the device's on-state resistance and reduces gate charge, leading to superior switching performance and lower conduction losses. This technology is especially beneficial in applications where efficiency is paramount.

Applications:

The STU7N60M2 is versatile and can be used in various high-efficiency applications. Its robustness and reliability make it an ideal choice for:

  • LED lighting systems
  • High-efficiency SMPS
  • Active Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supplies (UPS)
  • Inverter circuits for renewable energy sources
  • Automotive applications and motor drives

With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STU7N60M2 from STMicroelectronics stands out as a power MOSFET that delivers both performance and reliability for designers and engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8260 $57.8200
175+ $0.6778 $118.6150
265+ $0.6567 $174.0255
365+ $0.6354 $231.9210
475+ $0.6142 $291.7450
630+ $0.5507 $346.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,680 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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